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參數(shù)資料
| 型號： | PHB82NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS⑩ logic level FET |
| 中文描述： | 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 274K |
| 代理商： | PHB82NQ03LT |
Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 28 March 2002
2 of 14
9397 750 09308
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
peak gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
25
≤
T
j
≤
175
o
C
25
≤
T
j
≤
175
o
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
-
55
55
Max
30
30
±
20
±
25
75
75
240
136
+175
+175
Unit
V
V
V
V
A
A
A
W
°
C
°
C
t
p
≤
50
μ
s; pulsed; duty cycle = 25 %
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
-
-
75
240
A
A
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