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參數(shù)資料
| 型號： | PHB18NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場效應(yīng)管) |
| 中文描述： | 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 96K |
| 代理商： | PHB18NQ20T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP18NQ20T, PHB18NQ20T
MECHANICAL DATA
Fig.17. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
A1
D1
D
max.
E
e
Lp
HD
Q
c
2.54
2.60
2.20
15.40
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
e
e
E
b
D1
HD
D
Q
Lp
c
A1
A
1
3
2
mounting
base
98-12-14
99-06-25
August 1999
8
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP18NQ20T | N-channel TrenchMOS transistor |
| PHB193NQ06T | N-channel TrenchMOS standard level FET |
| PHP193NQ06T | N-channel TrenchMOS standard level FET |
| PHB21N06T | TrenchMOS transistor Standard level FET |
| PHB24N03LT | TrenchMOS transistor Logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB191NQ06LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHB191NQ06LT,118 | 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB191NQ06LT118 | 制造商:NXP Semiconductors 功能描述: |
| PHB193NQ06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
| PHB193NQ06T,118 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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