參數(shù)資料
型號(hào)： PHB18NQ20T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管)
中文描述： 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/9頁
文件大小： 96K
代理商： PHB18NQ20T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP18NQ20T, PHB18NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 14 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig;15
MIN.
-
MAX.
180
UNIT
mJ
I
AS
Peak non-repetitive
avalanche current
-
16
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.1
K/W
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
-
-
60
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
200
178
2
1
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3
4
-
-
6
130
180
-
522
10
100
0.05
10
-
500
47
-
9
-
22
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Gate source leakage current V
GS
=
±
10 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
GS
= 10 V; I
D
= 8 A
m
m
nA
μ
A
μ
A
nC
nC
nC
T
j
= 175C
I
GSS
I
DSS
V
DS
= 200 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 16 A; V
DD
= 160 V; V
GS
= 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 100 V; R
= 5.6
;
V
= 10 V; R
G
= 5.6
Resistive load
-
-
-
-
-
-
12
45
54
38
3.5
4.5
-
-
-
-
-
-
ns
ns
ns
ns
nH
nH
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1850
170
91
-
-
-
pF
pF
pF
August 1999
2
Rev 1.000
相關(guān)PDF資料
PDF描述
PHP18NQ20T N-channel TrenchMOS transistor
PHB193NQ06T N-channel TrenchMOS standard level FET
PHP193NQ06T N-channel TrenchMOS standard level FET
PHB21N06T TrenchMOS transistor Standard level FET
PHB24N03LT TrenchMOS transistor Logic level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB191NQ06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHB191NQ06LT,118 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB191NQ06LT118 制造商:NXP Semiconductors 功能描述:
PHB193NQ06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHB193NQ06T,118 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*