參數(shù)資料
型號(hào): PHB152NQ03LT
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: TrenchMOS logic level FET
中文描述: 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 8/13頁(yè)
文件大?。?/td> 83K
代理商: PHB152NQ03LT
Philips Semiconductors
PHP/B152NQ03LTA
N-channel TrenchMOS logic level FET
Product data
Rev. 01 — 05 March 2004
8 of 13
9397 750 12829
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
003aaa523
0
10
20
30
40
0.2
0.4
0.6
0.8
1
VSD (V)
IS
(A)
25
°
C
Tj = 175
°
C
003aaa524
0
2
4
6
8
10
0
20
40
60
80
QG (nC)
VGS
(V)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB152NQ03LTA 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHB152NQ03LTA /T3 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB152NQ03LTA,118 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB153NQ08LT,118 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB160N03T 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor