參數(shù)資料
型號(hào): PHB152NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS logic level FET
中文描述: 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/13頁
文件大?。?/td> 83K
代理商: PHB152NQ03LT
Philips Semiconductors
PHP/B152NQ03LTA
N-channel TrenchMOS logic level FET
Product data
Rev. 01 — 05 March 2004
4 of 13
9397 750 12829
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Thermal characteristics
5.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
R
th(j-a)
thermal resistance from junction to ambient
SOT78
SOT404
Thermal characteristics
Conditions
Min
-
Typ
-
Max
1
Unit
K/W
vertical in still air
mounted on a printed-circuit
board; minimum footprint
-
-
60
50
-
-
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
003aaa518
10-2
10-1
1
10
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
single pulse
0.2
0.1
0.05
δ
= 0.5
0.02
tp
tp
T
T
P
t
δ
=
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PHB152NQ03LTA 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
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PHB152NQ03LTA,118 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB153NQ08LT,118 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB160N03T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor