參數(shù)資料
型號(hào)： PHB100N03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 5/13頁
文件大?。?/td> 331K
代理商： PHB100N03LT
Philips Semiconductors
PHB100N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 September 2000
5 of 13
9397 750 07309
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
25
23
35
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 10
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 25 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 8
and
9
T
j
= 25
°
C
V
GS
= 5 V; I
D
= 25 A;
Figure 8
and
9
T
j
= 25
°
C
T
j
= 175
°
C
1
0.5
1.5
2
2.3
V
V
V
I
DSS
drain-source leakage current
0.05
5.0
10
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
5
5.8
m
6.2
7.5
14
m
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 25 V; I
D
= 25 A;
Figure 12
I
D
= 75 A; V
DS
= 15 V;
V
GS
= 5 V;
Figure 15
68
S
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-off rise time
turn-off delay time
turn-off fall time
60
8
32
3500
970
640
21
170
270
216
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 13
V
DD
= 15 V; R
D
= 0.6
;
V
GS
= 5 V; R
G
= 10
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V;
Figure 14
I
S
= 25 A;
dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
DS
= 25 V
0.95
1.2
V
t
rr
Q
r
140
270
ns
nC
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