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參數(shù)資料
| 型號： | PH8230E |
| 英文描述： | 1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | TrenchMOS（商標）加強場效應晶體管邏輯電平 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 232K |
| 代理商： | PH8230E |
Philips Semiconductors
PH8230E
TrenchMOS enhanced logic level FET
Product data
Rev. 02 — 29 April 2003
7 of 12
9397 750 11388
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
003aa414
0
-100
1
2
0
100
200
(V)
Tj (
°
C)
3
typ
max
min
VGS(th)
03am28
10-5
10-4
10-3
10-2
10-1
0
1
2
3
VGS (V)
ID
(A)
min
typ
max
003aaa374
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PH8230E T/R | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 30V 67A 5-Pin(4+Tab) LFPAK T/R |
| PH8230E,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH8230E | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET, N, 30V, LFPAK |
| PH-8365-115-135-035 | 制造商:WASHERS 功能描述: |
| PH865C12 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:High Voltage Schottky barrier diode |
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