參數(shù)資料
型號(hào)： PH8230E
英文描述： 1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述： TrenchMOS（商標(biāo)）加強(qiáng)場(chǎng)效應(yīng)晶體管邏輯電平
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 232K
代理商： PH8230E
Philips Semiconductors
PH8230E
TrenchMOS enhanced logic level FET
Product data
Rev. 02 — 29 April 2003
3 of 12
9397 750 11388
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10 V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa15
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03aa23
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
D 25 C
)
-------------------
100
%
×
=
003aaa369
10-1
1
10
102
103
10-1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
100
μ
s
Limit RDSon = VDS/ID
tp = 10
μ
s
相關(guān)PDF資料
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