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參數(shù)資料
| 型號： | PH6325L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 78.7 A, 25 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 138K |
| 代理商： | PH6325L |
Philips Semiconductors
PH6325L
N-channel TrenchMOS logic level FET
Preliminary data
Rev. 01 — 28 April 2004
5 of 13
9397 750 12307
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
and
10
T
j
= 25
°
C
T
j
= 150
°
C
V
DS
= 25 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
16 V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
f = 1 MHz
25
-
-
V
1
0.5
1.5
-
2
-
V
V
I
DSS
drain-source leakage current
-
-
-
0.06
-
10
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
7.4
11.8
9.5
15.2
m
m
-
-
-
4.7
7.5
1.8
6.3
10.1
-
m
m
R
G(int)
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gs1
pre-V
GS(th)
gate-source charge
Q
gs2
post-V
GS(th)
gate-source charge
Q
gd
gate-drain (Miller) charge
V
plat
plateau voltage
Q
g(tot)
total gate charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
C
iss
input capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward)
voltage
t
rr
reverse recovery time
Q
r
recovered charge
internal gate resistance
I
D
= 25 A; V
DS
= 12 V; V
GS
= 4.5 V;
Figure 11
and
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13.3
4.9
2.6
2.3
3.3
2.4
11.1
1871
517
179
2420
25
25
32
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
nC
pF
pF
pF
pF
ns
ns
ns
ns
I
D
= 0 A; V
DS
= 0 V; V
GS
= 4.5 V
V
GS
= 0 V; V
DS
= 12 V; f = 1 MHz;
Figure 13
and
14
V
GS
= 0 V; V
DS
= 0 V; f = 1 MHz
V
DS
= 12 V; I
D
= 25 A; V
GS
= 4.5 V;
R
G
= 4.7
I
S
= 25 A; V
GS
= 0 V;
Figure 15
-
0.85
1.2
V
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
-
-
33
13
-
-
ns
nC
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