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參數(shù)資料
| 型號： | PH4840S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 94.5 A, 40 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 84K |
| 代理商： | PH4840S |
Philips Semiconductors
PH4840S
N-channel TrenchMOS intermediate level FET
Preliminary data
Rev. 01 — 04 March 2004
2 of 12
9397 750 12814
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
LFPAK
Description
Plastic single-ended surface mounted package; 4 leads
Version
SOT669
PH4840S
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
Min
-
-
-
-
-
-
55
55
Max
40
±
20
94.5
59.5
283
62.5
+150
+150
Unit
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
52
150
A
A
unclamped inductive load; I
D
= 51 A;
t
p
= 0.21 ms; V
DD
≤
40 V; V
GS
= 10 V;
starting T
j
= 25
°
C
-
250
mJ
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