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參數(shù)資料
| 型號(hào)： | PF08103B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊，電子GSM900和DCS1800和雙頻手持電話 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | PF08103B |
PF08103B
5
Electrical Characteristics for DCS1800 mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 1710 to 1785MHz, V
DD1
= V
DD2
= 3.5V, Pin = +4.5dBm, V
CTL
= 0.1V, V
CTL
= 2.0V, Rg = Rl = 50
,
Tc = 25
°
C, Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1710
1785
MHz
Control voltage range
Vapc
0.2
2.2
V
Total efficiency
η
T
30
35
%
Pout
DCS
= 32.5dBm,
2nd harmonic distortion
2nd H.D.
45
35
dBc
Vapc = controlled
3rd harmonic distortion
3rd H.D.
45
35
dBc
4th~8th harmonic distortion
4th~8th H.D.
–35
dBc
Input VSWR
VSWR (in)
3
4
Output power (1)
Pout (1)
32.5
33
dBm
Vapc = 2.2V
Output power (2)
Pout (2)
30.8
31.3
dBm
V
DD
= 3.1V, Vapc = 2.2V,
Tc = +85
°
C
Isolation
42
37
dBm
Vapc = 0.2V
Switching time
t
r
, t
f
1
2
μ
s
Pout
DCS
= 0 to 32.5dBm
Stability
No parasitic oscillation
V
DD
= 3.1 to 5.1V, Pout
DCS
≤
32.5dBm,
Vapc
≤
2.2V DCS pulse.
Rg = 50
, Tc = 25
°
C,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
V
DD
= 3.1 to 5.1V, Pout
DCS
≤
32.5dBm,
Vapc
≤
2.2V DCS pulse. Rg = 50
,
t = 20sec., Tc = 25
°
C,
Output VSWR = 10 : 1 All phases
Noise power
Pnoise
77
dBm
f
0
= 1785MHz, f
rx
= f
0
+20MHz,
Pout
DCS
= 32.5dBm, RES BW = 100kHz
Slope Pout/Vapc
200
dB/V
Pout
DCS
= 0 to 32dBm
Phase shift
20
deg/
dB
Pout
DCS
= 31 to 32dBm
Total conversion gain
5
dB
f
0
= 1785MHz, (Pin = +4.5dBm)
Other sig. = 1765 MHz (
40dBc)
Pout
DCS
= 31dBm
AM output
20
%
Pout
DCS
= 0dBm,
4%AM modulation at input
50kHz modulation frequency
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