參數(shù)資料
型號: PESDXV4UG
廠商: NXP Semiconductors N.V.
英文描述: C TAP
中文描述: 四非常低電容ESD保護(hù)二極管陣列,SOT353封裝
文件頁數(shù): 4/11頁
文件大小: 75K
代理商: PESDXV4UG
9397 750 14479
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 7 April 2005
4 of 11
Philips Semiconductors
PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
6.
Characteristics
[1]
Non-repetitive current pulse 8/20
μ
s exponential decay waveform according to IEC 61000-4-5; see
Figure 1
.
[2]
Measured from pin 1, 3, 4 or 5 to 2.
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per diode
V
RWM
reverse stand-off voltage
PESD3V3V4UG
PESD5V0V4UG
I
RM
reverse leakage current
PESD3V3V4UG
PESD5V0V4UG
V
BR
breakdown voltage
PESD3V3V4UG
PESD5V0V4UG
C
d
diode capacitance
PESD3V3V4UG
Characteristics
Conditions
Min
Typ
Max
Unit
-
-
-
-
3.3
5.0
V
V
see
Figure 6
;
V
RWM
= 3.3 V
V
RWM
= 5.0 V
I
R
= 1 mA
-
-
40
3
300
25
nA
nA
5.3
6.4
5.6
6.8
5.9
7.2
V
V
f = 1 MHz; see
Figure 5
;
V
R
= 0 V
V
R
= 3.3 V
V
R
= 0 V
V
R
= 5 V
-
-
-
-
15
9
12
6
18
12
15
9
pF
pF
pF
pF
PESD5V0V4UG
V
CL
clamping voltage
PESD3V3V4UG
[1] [2]
I
PP
= 1 A
I
PP
= 2 A
I
PP
= 1 A
I
PP
= 1.7 A
I
R
= 1 mA
-
-
-
-
-
-
-
-
9
11
11
13
V
V
V
V
PESD5V0V4UG
r
dif
differential resistance
PESD3V3V4UG
PESD5V0V4UG
-
-
-
-
200
100
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