參數(shù)資料
型號(hào): PESDXV4UG
廠商: NXP Semiconductors N.V.
英文描述: C TAP
中文描述: 四非常低電容ESD保護(hù)二極管陣列,SOT353封裝
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 75K
代理商: PESDXV4UG
9397 750 14479
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 7 April 2005
3 of 11
Philips Semiconductors
PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
[1]
Non-repetitive current pulse 8/20
μ
s exponential decay waveform according to IEC 61000-4-5; see
Figure 1
.
[2]
Measured from pin 1, 3, 4 or 5 to 2.
[1]
Device stressed with ten non-repetitive ESD pulses; see
Figure 2
.
[2]
Measured from pin 1, 3, 4 or 5 to 2.
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
150
+150
+150
°
C
°
C
°
C
Table 6:
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
[1] [2]
PESD3V3V4UG
PESD5V0V4UG
PESDxV4UG series
-
-
-
12
12
10
kV
kV
kV
HBM MIL-STD-883
Table 7:
Standard
IEC 61000-4-2; level 4 (ESD); see
Figure 2
HBM MIL-STD-883; class 3
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Fig 1.
8/20
μ
s pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
t (
μ
s)
0
40
30
10
20
001aaa630
40
80
120
I
PP
(%)
0
e
t
100 % I
PP
; 8
μ
s
50 % I
PP
; 20
μ
s
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
=
0.7 ns to 1 ns
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