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參數(shù)資料
| 型號： | PD8XX2 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | InGaAs AVALANCHE PHOTO DIODES |
| 中文描述： | 銦鎵砷雪崩光電二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 167K |
| 代理商： | PD8XX2 |
TYPE
NAME
FEATURES
APPLICATION
ABSOLUTE MAXIMUM RATINGS
PD8042,PD8932
Active diameter 50
μ
m
Low noise
High speed response
Very small dark current
High quantum efficiency
Receiver for long-distance fiber - optic communication systems
DISCRIPTION
PD8XX2 is an InGaAs avalanche photodiode suitable for
receiving the light having low noise, a wavelength band of
1000 to 1600nm. This photodiode features low noise, a high
quantum efficiency and a very small dark current and is
suitable for the light receiving elements for long-distance
optical communications.
Parameter
(T
C
= 25
C
)
: C
t
=0.6F (typ.) for PD8932
Reverse current
Forward current
Case temperature
Storage temperature
Symbol
I
R
I
F
T
C
T
stg
Conditions
-
-
-
-
Ratings
500
2
-
40
~+
85
-
40
~+
100
Unit
μ
A
mA
C
C
MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
ELECTRICAL/OPTICAL CHARACTERISTICS
Parameter
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
Symbol
Test conditions
Limits
Typ.
Min.
40
-
-
-
1
60
0.7
60
80
2.5
90
0.9
100
-
-
Max.
Unit
V
(BR)R
C
t
I
D
η
fc
I
R
=
100
μ
A
V
R
=
0.9V
(BR) R
,f
=
1MHz
V
R
=
0.9V
(BR) R
M
=
1,
λ
=
1300nm
M
=
10,R
L
=
50
,-3dB
V
pF
nA
%
GHz
SEP
.2000
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|---|---|
| PD8XX2_02 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:InGaAs AVALANCHE PHOTO DIODES |
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