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參數(shù)資料
| 型號(hào)： | PD8XX3 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | InGaAs AVALANCHE PHOTO DIODES |
| 中文描述： | 銦鎵砷雪崩光電二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 128K |
| 代理商： | PD8XX3 |
TYPE
NAME
FEATURES
APPLICATION
ABSOLUTE MAXIMUM RATING
PD8933
φ
35
μ
m active diameter
Low noise
High speed response
Small dark current
High quantum efficiency
Receiber for long-distance fiber-optic communication systems
DESCRIPTION
PD8XX3 series are InGaAs avalanche photodiode which has
a sensitive area of
φ
35
μ
m, PD8XX3 is suitable for receiving
the light having a wavelength band of 1000 to 1600nm. This
photodiode features low noise, a high quantum efficiency and
a high speed response is suitable for the light receiving
element for long - distance optical communications.
Parameter
(T
C
=
25
C
)
Reverse current
Forward current
Case temperature
Storage temperature
Symbol
I
R
I
F
T
C
T
stg
Conditions
-
-
-
-
Ratings
500
2
-
40
~+
85
-
40
~+
100
Unit
μ
A
mA
C
C
MITSUBISHI LASER DIODES
PD8XX3 SERIES
InGaAs AVALANCHE PHOTO DIODES
ELECTRICAL/OPTICAL CHARACTERISTICS
parameter
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
Symbol
Test conditions
Limits
Typ.
Min.
40
-
-
-
1.8
60
0.5
30
80
2.5
90
0.7
60
-
-
Max.
Unit
V
(BR)R
C
t
I
D
η
fc
I
R
=
100
μ
A
V
R
=
0.9V
(BR) R
,f
=
1MHz
V
R
=
0.9V
(BR) R
M
=
1,
λ
=
1550nm
M
=
10,R
L
=
50
,
-
3dB
V
pF
nA
%
GHz
SEP
.2000
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