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參數(shù)資料
| 型號(hào)： | PD893D2 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | InGaAs AVALANCHE PHOTO DIODES |
| 中文描述： | 銦鎵砷雪崩光電二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 72K |
| 代理商： | PD893D2 |
MITSUBISHI PHOTO DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042, PD8932, PD893D2
DESCRIPTION
Feature
PD8XX2 Series are InGaAs avalanche photodiodes
which has a sensitive area of
f
50
m
m.
PD8XX2 is suitable for receiving the light having
a wavelength band of 1000 to 1600nm.
This photodiode features high-speed response and
a high responsivity, and is suitable for the
light receiving elements for optical fiber
communication systems.
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS <*1>
Symbol
Ir
If
Tc
Tstg
Parameter
Conditions
-
-
-
-
Ratings
500
2
-40 ~ +85
-40 ~ +100
Unit
m
A
mA
C
C
Reverse current
Forward curent
Case temperature
Storage temperature
Note1: The maximum rating means the limitation over which the device should not be operated
even instant time, and this does not mean the guarantee of its lifetime.
As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor
Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS
(Tc=25 C)
Limits
Typ.
60
60
0.8
0.4
*1
2.5
Symbol
Parameter
Test conditions
Min.
40
-
-
-
1.0
Max.
90
100
-
0.9
-
Unit
VBR
Id
R
Ct
fc
*1 Applied to PD8932: Ct=0.5pF(typ.), PD8042: Ct=0.7pF(typ.)
Break-down voltage Id=100
m
A
Dark current
Responsivity
Capacitance
Cut-off frequency
V
nA
A/W
pF
GHz
Vr=0.9VBR
M=1,
l
=1300nm
Vr=0.9VBR, f=1MHz
M=10,
l
=1300nm, RL=50
W
, -3dB
As of Mar, 2002
f
50
m
m active diameter
1000~1600nm wavelength band
Small dark current
Low noise
High responsivity
MITSUBISHI ELECTRIC
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