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| 型號(hào)： | PCF5079T |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Dual-band power amplifier controller for GSM, PCN and DCS |
| 中文描述： | 雙頻功率的GSM，PCN和DCS放大器控制器 |
| 文件頁(yè)數(shù)： | 13/28頁(yè) |
| 文件大小： | 146K |
| 代理商： | PCF5079T |
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2001 Nov 21
13
Philips Semiconductors
Product specification
Dual-band power amplifier controller for
GSM, PCN and DCS
PCF5079
11 OPERATING CHARACTERISTICS
V
DD
= 2.5 to 5 V; T
amb
=
40 to +85
°
C; unless otherwise specified.
Notes
1.
2.
Guaranteed by design.
Slew rates are measured between 10% and 90% of output voltage interval with a load of 40 pF to ground.
SYMBOL
PARAMETER
CONDITION
MIN.
TYP.
MAX.
UNIT
Integrator (OP4G and OP4D)
V
DD
B
G
PSRR
SR
pos
SR
neg
V
O(min)
V
O(max)
Capacitors C1, C2 and C4
supply voltage
gain bandwidth
power supply ripple rejection
positive slew rate
negative slew rate
minimum output voltage
maximum output voltage
2.5
3.6
4
55
3.2
3.2
5.0
0.2
V
MHz
dB
V/
μ
s
V/
μ
s
V
V
C
L
= 120 pF; note 1
f = 217 Hz; V
DD
= 3 V; note 1 50
V
DD
= 3 V; note 2
V
DD
= 3 V; note 2
T
amb
= 25
°
C; see Fig.7
R
L
= 350
; see Fig.8
2.0
2.0
0.85V
DD
M
matching ratio accuracy
between C1, C2 and C4
1
%
Low-pass filter for DAC signal (3rd-order Bessel filter)
f
3dB
t
d(group)
corner frequency
group delay time
70
1.8
100
3.0
130
4.2
kHz
μ
s
see Fig.11
handbook, halfpage
TC
(mV/K)
2.5
3.5
4.5
3
4
5
VDD (V)
MGT333
0.250
0.256
0.254
0.252
Fig.7
Temperature coefficient of V
O(min)
as a
function of V
DD
.
handbook, halfpage
IL
(mA)
2.5
3.5
4.5
3
4
5
VDD (V)
5
MGT334
11
9
7
Fig.8 Minimum load current as a function of V
DD
.
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