參數(shù)資料
型號: PCF5077T
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡(luò)
英文描述: Power amplifier controller for GSM and PCN systems
中文描述: SPECIALTY TELECOM CIRCUIT, PDSO16
文件頁數(shù): 12/24頁
文件大?。?/td> 120K
代理商: PCF5077T
1997 Nov 19
12
Philips Semiconductors
Preliminary specification
Power amplifier controller for GSM and
PCN systems
PCF5077T
DC CHARACTERISTICS
V
DDA1
, V
DDA2
and V
DDD
= V
DD
= 2.7 to 6.0 V; V
DDD
= V
DDA1
V
DDA2
; T
amb
=
40 to +85
°
C; unless otherwise specified.
Notes
1.
2.
3.
An AC coupling with 33 pF is recommended.
Tested at nominal working condition (V
DDD
= V
DDA1
= 3 V; V
DDA2
= 5 V). AC coupling = 33 pF.
The necessary start-up time t
ON
= 200
μ
s (see Fig.3) between PD and TRIG is more than t
pu
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DDD
V
DDA1
V
DDA2
I
DD(oper)(tot)
total operating current on the V
DD
pins
I
DD(idle)(tot)
total idle current on the V
DD
pins
digital supply voltage
analog supply voltage 1
analog supply voltage 2
2.7
2.7
2.7
3.0
3.0
5.0
9
4
6.0
6.0
6.0
18
20
V
V
V
mA
μ
A
f
CLK13
= 13 MHz; see Fig.5
PD = LOW
Logic inputs (pins TRIG, STROBE, CLK and DATA)
I
LIL
I
LIH
C
i
V
IL
V
IH
LOW-level input leakage current
HIGH-level input leakage current
input capacitance
LOW-level input voltage
HIGH-level input voltage
V
IL
= 0 V
V
IH
= 6 V
5
5
0
0.5V
DD
10
+5
+5
0.2V
DD
V
V
DD
μ
A
μ
A
pF
V
3-state output (pin DF)
V
OL
V
OH
I
LO
LOW-state output voltage
HIGH-state output voltage
3-state output leakage current
I
OL
= I
OH
= 3 mA
I
OL
= I
OH
= 3 mA
V
DF
= 0 to V
DD
0.7V
DD
5
0.4
+5
V
V
μ
A
Low-swing master clock input (pin CLK13)
I
Ll
C
i
Z
i
V
i(p
p)
Sensor input voltage (pin VS)
input leakage current
input capacitance
input impedance
input voltage (peak-to-peak value)
5
0.35
10
5
+5
V
DD
μ
A
pF
k
V
f
CLK13
= 13 MHz; note 1
note 2
V
i(VS)
input voltage at pin VS
3.0
V
DD
V
Band gap
I
bias
bias current (source for D1)
V
VS
= 0 V; T
amb
= 25
°
C;
TC =
0.08
μ
A/K
T
amb
= 25
°
C
21
28
35
μ
A
V
ref
TC
t
pu
reference voltage
temperature coefficient for V
ref
power-up time for V
ref
1.18
1.25
±
170
5
1.32
50
V
ppm/K
μ
s
note 3
Power-on reset, threshold voltage V
th
;
see Fig.4
V
th
threshold voltage
T
amb
= 25
°
C;
TC =
4 mV/K
1.2
1.5
1.8
V
t
rst
reset time
50
μ
s
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