參數(shù)資料
型號(hào)： PC755
廠(chǎng)商： Atmel Corp.
英文描述： PowerPC 755/745 RISC Microprocessor
中文描述： RISC微處理器PowerPC的745分之755
文件頁(yè)數(shù)： 24/50頁(yè)
文件大小： 1064K
代理商： PC755
24
PC755/745
2138D–HIREL–06/03
Electrical
Characteristics
Static Characteristics
Notes:
1. Nominal voltages; See
Table 5
for recommended operating conditions.
2. For processor bus signals, the reference is OV
DD
while L2OV
DD
is the reference for the L2 bus signals.
3. Excludes test signals (LSSD_MODE, L1_TSTCLK, L2_TSTCLK) and IEEE 1149.1 boundary scan (JTAG) signals.
4. Capacitance is periodically sampled rather than 100% tested.
5. The leakage is measured for nominal OV
DD
and V
DD
, or both OV
DD
and V
DD
must vary in the same direction (for example,
both OV
DD
and V
DD
vary by either +5% or
5%).
Dynamic Characteristics
After fabrication, parts are sorted by maximum processor core frequency as shown in
the “Clock AC Specifications” Section on page 25 and tested for conformance to the AC
specifications for that frequency. These specifications are for 275, 300, 333 MHz pro-
cessor core frequencies. The processor core frequency is determined by the bus
(SYSCLK) frequency and the settings of the PLL_CFG[0-3] signals. Parts are sold by
maximum processor core frequency.
Table 11.
DC Electrical Specifications at Recommended Operating Conditions (see Table 5)
Characteristic
Nominal bus
Voltage
(1)
Symbol
Min
Max
Unit
Input high voltage (all inputs except SYSLCK)
(2)(3)
2.5
V
IH
1.6
(L2)OV
DD
+ 0.3
V
3.3
V
IH
2
(L2)OV
DD
+ 0.3
V
Input low voltage (all inputs except SYSLCK)
(2)
2.5
V
IL
-0.3
0.6
V
3.3
V
IL
-0.3
0.8
V
SYSCLK input high voltage
2.5
KV
IH
1.8
OV
DD
+ 0.3
V
3.3
KV
IH
2.4
OV
DD
+ 0.3
V
SYSCLK input low voltage
2.5
KV
IL
-0.3
0.4
V
3.3
KV
IL
-0.3
0.4
V
Input leakage current,
(2)(3)
V
IN
= L2OV
DD
/OV
DD
Hi-Z (off-state) leakage current,
(2)(3)(5)
V
IN
= L2OV
DD
/OV
DD
Output high voltage, I
OH
=
-
6 mA
I
in
–
10
μA
I
TSI
–
10
μA
2.5
V
OH
1.7
–
V
3.3
V
OH
2.4
–
V
Output low voltage, I
OL
= 6 mA
2.5
V
OL
–
0.45
V
3.3
V
OL
–
0.4
V
Capacitance, V
IN
= 0V, f = 1 MHz
(3)(4)
C
in
–
5
pF
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