參數(shù)資料
型號: PBYL3025CTB
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes Schottky barrier
中文描述: 15 A, 25 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/6頁
文件大?。?/td> 52K
代理商: PBYL3025CTB
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL3025CT, PBYL3025CTB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 20 V/ 25 V
I
O(AV)
= 30 A
V
F
0.43 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The PBYL3025CT series is supplied in the SOT78 (TO220AB) conventional leaded package.
The PBYL3025CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL30
PBYL30
20CT
20CTB
20
25CT
25CTB
25
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
20
25
V
V
R
I
O(AV)
T
mb
120 C
square wave;
δ
= 0.5; T
mb
123 C
-
-
20
25
V
A
30
I
FRM
square wave;
δ
= 0.5; T
mb
123 C
-
30
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
1
. It is not possible to make connection to pin 2 of the SOT404 package.
- 65
175
C
k
a1
1
a2
3
2
1 2 3
tab
1
3
tab
2
March 1998
1
Rev 1.000
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