參數(shù)資料
型號: PBYR10100X
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: RS232 TO CURRENT LOOP CONV DB25M-DB25F - EUROPE
中文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/5頁
文件大?。?/td> 42K
代理商: PBYR10100X
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR10100X series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 100 V
I
F(AV)
= 10 A
V
F
0.74 V
GENERAL DESCRIPTION
PINNING
SOD113 (SOT186A)
Schottky rectifier diodes in a plastic
envelope with electrically isolated
mounting tab. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
1
cathode
2
anode
case
isolated
The PBYR10100 series is supplied
intheconventionalleadedSOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
Peak repetitive reverse
voltage
V
RWM
Working peak reverse
voltage
V
R
Continuous reverse voltage
I
F(AV)
Average rectified forward
current
I
FRM
Repetitive peak forward
current
I
FSM
Non-repetitive peak forward
current
CONDITIONS
MIN.
-
MAX.
100
UNIT
V
V
-
100
T
hs
115 C
square wave;
δ
= 0.5; T
hs
114 C
-
-
100
10
V
A
square wave;
δ
= 0.5; T
hs
114 C
-
20
A
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
135
150
A
A
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from
both terminals to external
heatsink
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
k
1
a
2
1
2
case
November 1999
1
Rev 1.000
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