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參數(shù)資料
| 型號(hào)： | PBYR1025D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | RS232 TO CURRENT LOOP DB25M/TERM BLOCK - JAPAN |
| 中文描述： | 10 A, 25 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | PBYR1025D |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1025D series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 20 V/ 25 V
I
F(AV)
= 10 A
V
F
≤
0.41 V
GENERAL DESCRIPTION
PINNING
SOT428
Schottky
surface mounting plastic envelope.
Intendedfor use asoutput rectifiers
in low voltage, high frequency
switched mode power supplies.
rectifier
diodes
in
a
PIN
DESCRIPTION
1
no connection
2
cathode
1
ThePBYR1025D series issupplied
in the SOT428 surface mounting
package.
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
20D
20
25D
25
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
V
V
RWM
-
20
25
V
V
R
I
F(AV)
T
mb
≤
120 C
square wave;
δ
= 0.5; T
mb
≤
140 C
-
-
20
25
V
A
10
I
FRM
square wave;
δ
= 0.5; T
mb
≤
140 C
-
20
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
100
110
A
A
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
k
a
3
tab
1
2
3
tab
1
It is not possible to make connection to pin 2 of the SOT428 package.
April 1998
1
Rev 1.000
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| PBYR1025D,118 | 制造商:NXP Semiconductors 功能描述: |
| PBYR1035 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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| PBYR1040 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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