參數(shù)資料
型號(hào): PBSS2515VS,115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
中文描述: 500 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-6
文件頁數(shù): 9/9頁
文件大?。?/td> 76K
代理商: PBSS2515VS,115
Koninklijke Philips Electronics N.V. 2004
SCA76
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales ofces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R75/03/pp
9
Date of release:
2004 Dec 23
Document order number:
9397 750 14426
相關(guān)PDF資料
PDF描述
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
PBSS2540E,115 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
PBSS2540M,315 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
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