參數(shù)資料
型號： PBSS2515VS,115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
中文描述： 500 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁數(shù)： 2/9頁
文件大?。?/td> 76K
代理商： PBSS2515VS,115
2004 Dec 23
2
Philips Semiconductors
Product specication
15 V low VCE(sat) NPN double transistor
PBSS2515VS
FEATURES
300 mW total power dissipation
Very small 1.6 × 1.2 mm ultra thin package
Excellent coplanarity due to straight leads
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat lead
Replaces two SC-75/SC-89 packaged low VCEsat
transistors on same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low VCEsat double transistor in a SOT666 plastic
package.
PNP complement: PBSS3515VS.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS2515VS
N9
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
15
V
ICM
peak collector current
1
A
RCEsat
equivalent on-resistance
<500
m
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM447
13
2
TR1
TR2
6
4
5
12
3
4
6
5
Top view
Fig.1
Simplified outline (SOT666) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PBSS2515VS
plastic surface mounted package; 6 leads
SOT666
相關(guān)PDF資料
PDF描述
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
PBSS2540E,115 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
PBSS2540M,315 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
PBU602 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
PBW.3K.93C.CLCT90Z 9/125 um, SINGLE MODE, SIMPLEX FIBER OPTIC CONNECTOR, SOCKET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS2515YPN 制造商:NXP Semiconductors 功能描述:TRANSISTOR SOT-363 制造商:NXP Semiconductors 功能描述:TRANSISTOR, SOT-363 制造商:NXP Semiconductors 功能描述:Dual NPN/PNP transistor,PBSS2515YPN
PBSS2515YPN T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515YPN,115 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515YPN115 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR ARRAY NPN & PNP 15V 5
PBSS2540E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:40 V, 500 mA NPN low VCEsat (BISS) transistor
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