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參數(shù)資料
| 型號： | PBSS2515VS,115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| 中文描述： | 500 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 76K |
| 代理商： | PBSS2515VS,115 |
2004 Dec 23
3
Philips Semiconductors
Product specication
15 V low VCE(sat) NPN double transistor
PBSS2515VS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specied
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
100
mA
Ptot
total power dissipation
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
416
K/W
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PBSS2515YPN | 制造商:NXP Semiconductors 功能描述:TRANSISTOR SOT-363 制造商:NXP Semiconductors 功能描述:TRANSISTOR, SOT-363 制造商:NXP Semiconductors 功能描述:Dual NPN/PNP transistor,PBSS2515YPN |
| PBSS2515YPN T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515YPN,115 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515YPN115 | 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR ARRAY NPN & PNP 15V 5 |
| PBSS2540E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:40 V, 500 mA NPN low VCEsat (BISS) transistor |
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