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參數(shù)資料
| 型號： | PBSS2515VPN,115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| 中文描述： | 500 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 1.60 X 1.20 MM, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 98K |
| 代理商： | PBSS2515VPN,115 |
2005 Jan 11
4
Philips Semiconductors
Product specication
15 V low VCE(sat) NPN/PNP transistor
PBSS2515VPN
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 15 V; IE =0A
100
nA
VCB = 15 V; IE = 0 A; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0A
100
nA
hFE
DC current gain
VCE =2V; IC =10mA
200
150
90
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
25
mV
IC = 200 mA; IB =10mA
150
mV
250
mV
RCEsat
equivalent on-resistance
300
<500
m
VBEsat
base-emitter saturation voltage
1.1
V
VBE
base-emitter turn-on voltage
0.9
V
NPN transistor
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz 250
420
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0 A; f = 1MHz
4.4
6
pF
PNP transistor
fT
transition frequency
IC = 100 mA; VCE = 5V;
f = 100 MHz
100
280
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0 A; f = 1MHz
10
pF
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| PBSS2515VS,115 | 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PBSS2515VS | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-666 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-666 制造商:NXP Semiconductors 功能描述:Dual NPN/NPN transistor,PBSS2515VS |
| PBSS2515VS T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515VS,115 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515VS,315 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 15V 0.5A 6-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515VS115 | 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR DUAL NPN 15V 500MA 6 |
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