參數(shù)資料
型號: PBSS2515VPN,115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
中文描述: 500 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: 1.60 X 1.20 MM, PLASTIC PACKAGE-6
文件頁數(shù): 4/11頁
文件大?。?/td> 98K
代理商: PBSS2515VPN,115
2005 Jan 11
2
Philips Semiconductors
Product specication
15 V low VCE(sat) NPN/PNP transistor
PBSS2515VPN
FEATURES
300 mW total power dissipation
Very small 1.6 × 1.2 mm ultra thin package
Excellent coplanarity due to straight leads
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat lead
Replaces two SC75/SC89 packaged low VCEsat
transistors on same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATION
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN/PNP low VCEsat transistor pair in a SOT666 plastic
package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS2515VPN
N8
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
15
V
ICM
peak collector current
1
A
RCEsat
equivalent on-resistance
<500
m
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM443
13
2
TR1
TR2
6
4
5
12
3
4
6
5
Top view
Fig.1
Simplified outline (SOT666) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PBSS2515VPN
plastic surface mounted package; 6 leads
SOT666
相關(guān)PDF資料
PDF描述
PBSS2515VS,115 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
PBSS2540E,115 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
PBSS2540M,315 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
PBU602 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS2515VS 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-666 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-666 制造商:NXP Semiconductors 功能描述:Dual NPN/NPN transistor,PBSS2515VS
PBSS2515VS T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515VS,115 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515VS,315 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 15V 0.5A 6-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS2515VS115 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR DUAL NPN 15V 500MA 6