參數(shù)資料
型號: P2V28S20ATP-7
廠商: Vanguard International Semiconductor Corporation
英文描述: 128Mb SDRAM Specification
中文描述: 128Mb的SDRAM內(nèi)存規(guī)格
文件頁數(shù): 26/51頁
文件大?。?/td> 652K
代理商: P2V28S20ATP-7
JULY.2000
Rev.2.2
128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
Page-25
[Write with Auto-Precharge Interrupted by Write or Read to another Bank]
Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after
tRP. Auto-precharge interruption by a command to the same bank is inhibited.
Write Interrupted by WRITE to another bank (BL=4)
CLK
Command
A0-9,11
A10
BA0-1
DQ
Db0
Db1
Db2
Db3
Write
Ya
1
00
Da0
Da1
Write
Yb
0
10
BL
tWR
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
CLK
Command
A0-9,11
A10
BA0-1
DQ
Write
Ya
1
00
Da0
Da1
Read
Yb
0
10
BL
tWR
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
Qb0
Qb1
Qb2
Qb3
Write Interrupted by READ to another bank (CL=2,BL=4)
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P2V28S20ATP-75 128Mb SDRAM Specification
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