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參數(shù)資料
| 型號： | P01xxxN |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Sensitive Gate SCR(硅控整流管) |
| 中文描述： | 靈敏柵極可控硅（硅控整流管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | P01XXXN |
P01xxxN
January 1995
SENSITIVE GATE SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
*
RMS on-state current
(180
°
conductionangle)
Ta= 70
°
C
0.8
A
I
T(AV)
*
Mean on-statecurrent
(180
°
conductionangle)
Ta= 70
°
C
0.5
A
I
TSM
Non repetitivesurge peak on-statecurrent
(T
j
initial= 25
°
C )
tp = 8.3 ms
8
A
tp = 10 ms
7
I
2
t
I
2
t Value for fusing
tp = 10 ms
0.24
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1A/
μ
s.
30
A/
μ
s
T
stg
T
j
Storageand operatingjunction temperaturerange
- 40, + 150
- 40, + 125
°
C
Tl
Maximum lead temperaturefor soldering during 10s
260
°
C
* : With 5cm2copper (e=35
μ
m) surfaceunder tab.
ABSOLUTE RATINGS
(limitingvalues)
SOT223
(Plastic)
I
T(RMS)
= 0.8A
V
DRM
= 100V to 400V
Low I
GT
<200
μ
A
FEATURES
Symbol
Parameter
Voltage
Unit
A
B
C
D
V
DRM
V
RRM
Repetitivepeak off-statevoltage
T
j
=125
°
C R
GK
= 1K
100
200
300
400
V
The P01xxxN series
performance planar PNPN technology. These
parts are intended for general purpose high
volume
applications
technology.
of SCRs uses a high
using
surface
mount
DESCRIPTION
A
A
K
G
1/5
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