- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361164 > NTP2955 (ON SEMICONDUCTOR) Power MOSFET 60V, 12A, Single P Channel, TO220(60V, 12A功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTP2955 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 60V, 12A, Single P Channel, TO220(60V, 12A功率MOSFET) |
| 中文描述： | 2.4 A, 60 V, 0.196 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | NTP2955 |
NTP2955
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
=25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
250 A
60
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
67
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
=
48
V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
10
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20
V
±
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
=
250 A
2.0
4.0
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
56
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
=
10
V, I
D
=
12
A
156
196
m
Forward Transconductance
g
FS
V
DS
=
60
V, I
D
=
12
A
6.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
25
V
507
700
pF
Output Capacitance
C
OSS
150
250
Reverse Transfer Capacitance
C
RSS
48
98
Total Gate Charge
Q
G(TOT)
V
GS
=
10 V, V
=
48
V,
I
D
=
12 A
14
nC
Threshold Gate Charge
Q
G(TH)
1.6
2.5
Gate
to
Source Charge
Q
GS
3.4
Gate
to
Drain Charge
Q
GD
6.2
SWITCHING CHARACTERISTICS
(Note 3)
Turn
On Delay Time
t
d(on)
V
GS
=
10
V, V
DD
=
30
V,
D
=
12 A, R
G
= 9.1
10
20
ns
Rise Time
t
r
41
80
Turn
Off Delay Time
t
d(off)
27
47
Fall Time
t
f
45
85
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
=
12 A
T
J
= 25
°
C
T
J
= 125
°
C
1.6
2.0
V
1.36
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ s,
I
S
=
12 A
53
ns
Charge Time
t
a
42
Discharge Time
t
b
12
Reverse Recovery Charge
Q
RR
126
nC
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
相關PDF資料 |
PDF描述 |
|---|---|
| NTP4302 | CONNECTOR ACCESSORY |
| NTB4302 | Power MOSFET 74 Amps, 30 Volts |
| NTB4302T4 | Power MOSFET 74 Amps, 30 Volts |
| NTP52N10 | Power MOSFET 52 Amps, 100 Volts |
| NTP52N10D | Power MOSFET 52 Amps, 100 Volts |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTP2955G | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N06 | 功能描述:MOSFET N-CH 60V 27A TO220AB RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NTP30N06L | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N06LG | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N20 | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。