參數(shù)資料
型號: NTP2955
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 60V, 12A, Single P Channel, TO220(60V, 12A功率MOSFET)
中文描述: 2.4 A, 60 V, 0.196 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, CASE 221A-09, TO-220, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 141K
代理商: NTP2955
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
N
TP2955/D
NTP2955
Power MOSFET
60 V,
12 A, Single P
Channel, TO
220
Features
Low R
DS(on)
Rugged Performance
Fast Switching
Pb
Free Package is Available*
Applications
Industrial
Automotive
Power Supplies
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
60
V
Gate
to
Source Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 25
°
C
T
C
= 85
°
C
T
C
= 25
°
C
I
D
12
A
9.0
Power Dissipation
(Note 1)
P
D
62.5
W
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
2.4
A
1.8
Power Dissipation
(Note 1)
P
D
2.4
W
Pulsed Drain Current
t
p
= 10 s
I
DM
42
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
175
°
C
Source Current (Body Diode)
I
S
12
A
Single Pulse Drain
to
Source Avalanche
Energy (V
DD
=
30 V, V
G
=
10 V,
I
PK
=
12 A, L = 3.0 mH, R
G
= 3.0 )
EAS
216
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction
to
Case
R
JC
2.4
°
C/W
Junction
to
Ambient
Steady State (Note 1)
R
JA
62.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
S
G
P
Channel
60 V
156 m @
10 V
R
DS(on)
Typ
12 A
I
D
MAX
V
(BR)DSS
Device
Package
Shipping
ORDERING INFORMATION
NTP2955
TO
220
50 Units / Rail
TO
220
CASE 221A
STYLE 5
123
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb
Free Package
NTP2955G
TO
220
(Pb
Free)
50 Units / Rail
http://onsemi.com
NT2955G
AYWW
D S
D
G
1
MARKING DIAGRAM &
PIN ASSIGNMENT
相關(guān)PDF資料
PDF描述
NTP4302 CONNECTOR ACCESSORY
NTB4302 Power MOSFET 74 Amps, 30 Volts
NTB4302T4 Power MOSFET 74 Amps, 30 Volts
NTP52N10 Power MOSFET 52 Amps, 100 Volts
NTP52N10D Power MOSFET 52 Amps, 100 Volts
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTP2955G 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP30N06 功能描述:MOSFET N-CH 60V 27A TO220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTP30N06L 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP30N06LG 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP30N20 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube