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參數(shù)資料
| 型號： | NTP13N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement-Mode TO-220(13A,100V,N通道，增強(qiáng)模式，TO-200封裝的功率MOSFET) |
| 中文描述： | 13 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 205K |
| 代理商： | NTP13N10 |
NTP13N10
http://onsemi.com
3
3
1.5
1
0.5
2
2.5
0
50
175
125
100
75
50
25
0
25
I
D
= 6.5 A
V
GS
= 10 V
26
24
22
10
8
6
4
2
0
10
7
6
5
4
3
2
1
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
0
8
9
20
18
16
14
12
I
D
,
V
GS
= 10 V
9 V
Figure 1. On
Region Characteristics
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
26
24
22
10
8
6
4
2
0
10
7
6
5
4
3
2
1
0
Figure 2. Transfer Characteristics
Figure 3. On
Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
0.5
0.4
0.3
0.1
10
8
6
4
2
0
Figure 4. On
Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
8
6
4
2
0
0.175
0.15
0.125
0.1
0
0.2
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
50
40
20
1000
100
10
10,000
Figure 6. Drain
to
Source Leakage Current
versus Voltage
I
D
,
R
D
,
T
S
26
22
0.2
R
D
,
T
S
26
10
R
D
T
S
I
D
,
70
60
100
80
8
9
90
4.5 V
5 V
5.5 V
7 V
6 V
T
J
= 25
°
C
8 V
T
J
= 25
°
C
T
J
=
55
°
C
T
J
= 100
°
C
V
DS
≥
10 V
T
J
= 25
°
C
T
J
=
55
°
C
T
J
= 100
°
C
V
GS
= 10 V
T
J
= 150
°
C
V
GS
= 0 V
T
J
= 100
°
C
20
18
16
14
12
6.5 V
7.5 V
20
18
16
14
12
24
T
J
= 25
°
C
V
GS
= 10 V
V
GS
= 15 V
18
16
14
12
20 22 24
30
150
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