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參數(shù)資料
| 型號(hào)： | NTP13N10 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement-Mode TO-220(13A,100V,N通道，增強(qiáng)模式，TO-200封裝的功率MOSFET) |
| 中文描述： | 13 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 205K |
| 代理商： | NTP13N10 |
NTP13N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
147
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 125
°
C)
I
DSS
5.0
50
Adc
Gate
Body Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V
DS
= V
GS,
I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
3.2
7.6
4.0
Vdc
mV/
°
C
Static Drain
to
Source On
State Resistance
(V
GS
= 10 Vdc, I
D
= 6.5 Adc)
(V
GS
= 10 Vdc, I
D
= 6.5 Adc, T
J
= 125
°
C)
R
DS(on)
0.130
0.250
0.165
0.400
Ω
Drain
to
Source On
Voltage
(V
GS
= 10 Vdc, I
D
= 13 Adc)
V
DS(on)
1.82
2.34
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 6.5 Adc)
g
FS
6.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
390
550
pF
Output Capacitance
C
oss
115
160
Reverse Transfer Capacitance
C
rss
35
70
SWITCHING CHARACTERISTICS
(Notes 2 & 3)
Turn
On Delay Time
(V
DD
= 80 Vdc, I
D
= 13 Adc,
V
GS
= 10 Vdc, R
G
= 9.1
Ω
)
t
d(on)
11
20
ns
Rise Time
t
r
40
80
Turn
Off Delay Time
t
d(off)
20
40
Fall Time
t
f
36
70
Gate Charge
(V
DS
= 80 Vdc, I
D
= 13 Adc,
V
GS
= 10 Vdc)
Q
tot
14
20
nC
Q
gs
3.0
Q
gd
7.0
BODY
DRAIN DIODE RATINGS
(Note 2)
Forward On
Voltage
(I
S
= 13 Adc, V
GS
= 0 Vdc)
(I
S
= 13 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0.98
0.88
1.3
Vdc
Reverse Recovery Time
(I
S
= 13 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
85
ns
t
a
60
t
b
28
Reverse Recovery Stored Charge
Q
RR
0.3
C
2. Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
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