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參數(shù)資料
| 型號： | NTMS4705N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 12A, Single N Channel, SO8(30V, 12A，功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，12A條，單個N頻道，采用SO8（30V的，第12A，功率MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 72K |
| 代理商： | NTMS4705N |
NTMS4705N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
15
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
=
24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
50
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.0
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
=
10
V, I
D
= 12 A
8.0
10
m
V
GS
= 4.5
V, I
D
= 10 A
10.5
14
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
=
10 A
19
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
=
0 V, f
=
1.0 MHz, V
DS
=
24 V
1078
pF
Output Capacitance
C
oss
460
Reverse Transfer Capacitance
C
rss
127
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
=
10 A
11
18
nC
Threshold Gate Charge
Q
G(TH)
1.1
GatetoSource Charge
Q
GS
2.1
GatetoDrain Charge
Q
GD
5.8
Gate Resistance
R
G
1.76
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 15 V, I
D
= 1.0 A,
R
G
= 3.0
7.8
ns
Rise Time
t
r
4.7
TurnOff Delay Time
t
d(off)
27
Fall Time
t
f
17
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
T
J
= 25
°
C
0.73
1.0
V
T
J
= 125
°
C
0.51
Reverse Recovery Time
t
RR
V
GS
= 0 V, d
/d
= 100 A/ s,
I
S
= 3.0 A
38
ns
Charge Time
t
a
17
Discharge Time
t
b
21
Reverse Recovery Charge
Q
RR
2%.
30
nC
3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
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