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參數(shù)資料
| 型號： | NTMFS4744N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 53A, Single N(53A, 30V功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，53A條，單個N（第53A，30V的功率MOSFET的） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | NTMFS4744N |
NTMFS4744N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase (Drain)
R
JC
2.65
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
JA
56.9
JunctiontoAmbient – Steady State (Note 2)
R
JA
142.4
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
J
10
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= 20 V
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.0
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
7.6
m
I
D
= 15 A
7.3
I
D
= 10 A
7.3
10
V
GS
= 4.5 V
I
D
= 30 A
10.4
I
D
= 15 A
10.1
I
D
= 10 A
9.9
14
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
25
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1300
pF
Output Capacitance
C
OSS
550
Reverse Transfer Capacitance
C
RSS
132
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
10
17
nC
Threshold Gate Charge
Q
G(TH)
0.9
GatetoSource Charge
Q
GS
1.8
GatetoDrain Charge
Q
GD
5.9
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
= 15 V;
I
D
= 30 A
25
37
nC
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A,
R
G
12
ns
Rise Time
t
r
203
TurnOff Delay Time
t
d(OFF)
14
Fall Time
t
f
83
3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTMFS4744NT1G | 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4744NT3G | 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| NTMFS4821NT1G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4821NT3G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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