參數(shù)資料
型號(hào): NTK3134N
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET(功率MOSFET)
中文描述: 功率MOSFET(功率MOSFET的)
文件頁數(shù): 3/5頁
文件大小: 58K
代理商: NTK3134N
NTK3134N
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V)
V
GS
, GATETOSOURCE VOLTAGE (V)
6
5.5
2.5
2
1.5
1
0.5
0
0
0.5
1.0
1.5
2.0
2.0
1.75
1.5
1.25
1.0
0.75
0
0.5
1.0
1.5
2.0
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
6
3
2.5
2
1.5
1
0
0.25
0.50
0.75
1.00
1.25
1.50
1.8
1.6
1.3
1.1
0.8
0.6
0.3
0.15
0.18
0.20
0.23
0.25
0.28
0.30
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
, DRAINTOSOURCE VOLTAGE (V)
115
90
65
40
15
10
35
60
0.1
0.2
0.3
0.4
0.5
0.6
20
15
10
5.0
10
100
1000
10,000
I
D
,
I
D
,
R
D
,
R
D
,
I
D
,
4.5
4
3.5
3
5
V
GS
= 4.5 V to 2.2 V
1.4 V
1.5 V
1.6 V
1.8 V
2.0 V
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 55
°
C
V
DS
5 V
5.5
5
4.5
4
3.5
I
D
= 0.89 A
T
J
= 25
°
C
T
J
= 25
°
C
V
GS
= 2.5 V
V
GS
= 4.5 V
R
D
,
140
V
GS
= 1.5 V, I
D
= 200 mA
V
GS
= 1.8 V, I
D
= 710 mA
V
GS
= 2.5 V, I
D
= 710 mA
V
GS
= 4.5 V, I
D
= 1 A
T
J
= 125
°
C
V
GS
= 0 V
T
J
= 150
°
C
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