參數(shù)資料
型號： NTK3134N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 2/5頁
文件大?。?/td> 58K
代理商： NTK3134N
NTK3134N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State
(Note 3)
R
JA
280
°
C/W
JunctiontoAmbient – t = 5 s
(Note 3)
R
JA
228
JunctiontoAmbient – Steady State Minimum Pad
(Note 4)
R
JA
400
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown
Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
20
V
DraintoSource Breakdown
Voltage Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 A, Reference to 25
°
C
18
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
2.0
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
4.5 V
±
0.5
A
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
0.45
1.2
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.4
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 890 mA
0.20
0.35
V
GS
= 2.5 V, I
D
= 780 mA
0.26
0.45
V
GS
= 1.8 V, I
D
= 700 mA
0.43
0.65
V
GS
= 1.5 V, I
D
= 200 mA
0.56
1.2
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 800 mA
1.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 16 V
79
120
pF
Output Capacitance
C
OSS
13
20
Reverse Transfer Capacitance
C
RSS
9.0
15
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 6)
Turn On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 500 mA,
R
G
= 10
6.7
ns
Rise Time
t
r
4.8
TurnOff Delay Time
t
d(OFF)
17.3
Fall Time
t
f
7.4
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 350 mA
T
J
= 25
°
C
0.75
1.2
V
Reverse Recovery Time
t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ s,
I
S
= 1.0 A, V
DD
= 20 V
8.1
ns
Charge Time
t
a
6.4
Discharge Time
t
b
1.7
Reverse Recovery Charge
Q
RR
3.0
nC
5. Pulse Test: pulse width = 300 s, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures
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