參數(shù)資料
型號： NTJS3157N
廠商： ON SEMICONDUCTOR
英文描述： Trench Power MOSFET 20 V, 4.0 A(20V, 4.0A, 功率MOSFET)
中文描述： 戴為20 V功率MOSFET，4.0（20V的，4.0a上，功率MOSFET的）
文件頁數(shù)： 1/6頁
文件大?。?/td> 133K
代理商： NTJS3157N
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 2
1
Publication Order Number:
NTJS3157N/D
NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N
Channel, SC
88
Features
Leading Trench Technology for Low R
DS(ON)
Extending Battery Life
Fast Switching for Increased Circuit Efficiency
SC
88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Utilization, Same as SC
70
6
Pb
Free Packages are Available
Applications
DC
DC Conversion
Low Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
20
V
Gate
to
Source Voltage
V
GS
±
8.0
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
3.2
A
2.3
t
≤
5 s
4.0
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
1.0
W
Pulsed Drain Current
t
p
= 10 s
I
DM
10
A
°
C
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
Source Current (Body Diode)
I
S
1.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State
R
JA
125
°
C/W
Junction
to
Ambient
t
≤
5 s
R
JA
80
Junction
to
Lead – Steady State
R
JL
45
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SOT
363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
D
D
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
T92
M
1
6
1
T92
M
= Device Code
= Date Code
= Pb
Free Package
S
D
D
G
(Note: Microdot may be in either location)
V
(BR)DSS
R
DS(on)
Typ
45 m @ 4.5 V
I
D
Max
55 m @ 2.5 V
70 m @ 1.8 V
4.0 A
20 V
Top View
SC
88 (SOT
363)
D
D
S
D
D
6
5
4
1
2
3
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTJS3157NT1 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS3157NT1G 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS3157NT2 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS3157NT2G 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTJS3157NT4 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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