參數(shù)資料
型號： NTK3043N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 1/5頁
文件大?。?/td> 54K
代理商： NTK3043N
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 3
1
Publication Order Number:
NTK3043N/D
NTK3043N
Power MOSFET
20 V, 285 mA, NChannel with ESD
Protection, SOT723
Features
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC89 and 38% Thinner than SC89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V
GS(TH)
< 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are PbFree Devices
Applications
Interfacing, Switching
High Speed Switching
Cellular Phones, PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
10
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
255
mA
T
A
= 85
°
C
185
t
5 s
T
A
= 25
°
C
285
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
440
mW
t
5 s
545
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
I
D
210
mA
T
A
= 85
°
C
155
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
310
mW
Pulsed Drain Current
t
p
= 10 s
I
DM
400
mA
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
°
C
Source Current (Body Diode) (Note 2)
I
S
286
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
1.5 @ 4.5 V
I
D
Max
20 V
2.4 @ 2.5 V
285 mA
Device
Package
Shipping
ORDERING INFORMATION
NTK3043NT1G
SOT723*
4000 / Tape & Reel
SOT723
CASE 631AA
MARKING
DIAGRAM
Top View
3
1
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently PbFree.
5.1 @ 1.8 V
KA
1
KA
M
= Device Code
= Date Code
1 Gate
2 Source
3 Drain
6.8 @ 1.65 V
NTK3043NT5G
SOT723*
8000 / Tape & Reel
M
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相關代理商/技術參數(shù)
參數(shù)描述
NTK3043NAT5G 功能描述:MOSFET NFET 20V 285mA TR SOT723 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTK3043NT1G 功能描述:MOSFET NFET 20V 285mA TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTK3043NT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NTK3043NT5G 功能描述:MOSFET NFET 20V 285MA 3.4 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTK3134N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
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