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參數(shù)資料
| 型號(hào)： | NTHD4N02FT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET and Schottky Diode |
| 中文描述： | 2900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 1206A-03, CHIPFET-8 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | NTHD4N02FT1 |
NTHD4N02F
http://onsemi.com
5
TYPICAL SCHOTTKY PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
10
0.00
0.20
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
F
,
C
1
0.1
Figure 11. Typical Forward Voltage
Figure 12. Maximum Forward Voltage
10
1E3
100E6
10E6
Figure 13. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
I
R
R
Figure 14. Maximum Reverse Current
25
3
2
2.5
1
0
65
125
105
Figure 15. Current Derating
T
L
, LEAD TEMPERATURE (
°
C)
T
J
= 150
°
C
100E3
T
J
= 25
°
C
85
165
freq = 20 kHz
I
O
3.5
20
0
1
0
3.5
3
Figure 16. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (AMPS)
2
P
F
,
0.2
1.4
0.40
0.5
1.5
2.5
0.60
0.80
0
T
J
= 25
°
C
T
J
= 55
°
C
10
0.00
0.20
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
I
F
,
C
1
0.1
T
J
= 150
°
C
0.40
0.60
0.80
T
J
= 25
°
C
10E3
T
J
= 100
°
C
T
J
= 150
°
C
10
1E3
100E6
10E6
V
R
, REVERSE VOLTAGE (VOLTS)
100E3
T
J
= 25
°
C
20
0
10E3
T
J
= 100
°
C
T
J
= 150
°
C
I
R
M
1.5
0.5
45
145
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
square wave
dc
1
1.2
0.4
0.6
0.8
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
square wave
dc
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD4N02FT1G | 功能描述:MOSFET 20V 3.9A N-Channel w/3.7A Schottky RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4P02 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4P02F | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4P02F_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4P02FT1 | 功能描述:MOSFET -20V -3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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