參數(shù)資料
型號： NTHD4N02FT1
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Power MOSFET and Schottky Diode
中文描述： 2900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： CASE 1206A-03, CHIPFET-8
文件頁數(shù)： 2/6頁
文件大小： 64K
代理商： NTHD4N02FT1
NTHD4N02F
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 1)
R
JA
R
JA
110
°
C/W
°
C/W
JunctiontoAmbient – t
5 s
60
1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.27 in sq.
[1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= 250 A
V
GS
= 0 V
V
DS
= 16 V
20
28
V
Zero Gate Voltage Drain Current
T
J
= 25
°
C
T
J
= 85
°
C
12 V
1.0
A
5.0
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250 A
V
GS
= 4.5, I
D
= 2.9 A
V
GS
= 2.5, I
D
= 2.3 A
V
DS
= 10 V, I
D
= 2.9 A
0.6
1.2
V
DraintoSource OnResistance
0.058
0.080
0.077
0.115
Forward Transconductance
g
FS
6.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
V
GS
= 0 V f
V
DS
= 10 V
1 0 MH
180
300
pF
Output Capacitance
80
130
Reverse Transfer Capacitance
30
50
Total Gate Charge
V
GS
= 4 5 V V
= 10 V,
I
D
= 2.9 A
2.6
4.0
nC
GatetoSource Charge
0.6
GatetoDrain Charge
0.7
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
5.0
10
ns
Rise Time
V
GS
= 4.5 V, V
DD
= 16 V,
D
= 2.9 A, R
G
= 2.5
9.0
18
TurnOff Delay Time
10
20
Fall Time
3.0
6.0
DRAINSOURCE DIODE CHARACTERISTICS
(Note 2)
Forward Diode Voltage
V
SD
t
RR
ta
V
GS
= 0 V, I
S
= 2.6 A
0.8
1.15
V
Reverse Recovery Time
12.5
ns
Charge Time
V
GS
= 0 V, I
S
= 2.6 A,
dI
S
/dt = 100 A/ s
9.0
Discharge Time
tb
3.5
Reverse Recovery Charge
Q
RR
6.0
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Maximum Instantaneous Forward Voltage
V
F
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 10 V
V
R
= 20 V
0.31
V
0.365
Maximum Instantaneous Reverse Current
I
R
0.75
mA
2.5
NonRepetitive Peak Surge Current
I
FSM
Halfwave, Single Pulse, 60 Hz
23
A
2. Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
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