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參數(shù)資料
| 型號(hào)： | NTHD4508NT1 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| 中文描述： | 3.1 A, 20 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 1206A-03, CHIPFET-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | NTHD4508NT1 |
NTHD4508N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
I
DSS
V
GS
= 0 V
20
V
Zero Gate Voltage Drain Current
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
= 16 V, T
J
= 125
°
C
V
DS
= 0 V, V
GS
=
1.0
A
10
GatetoSource Leakage Current
I
GSS
12 V
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250 A
V
GS
= 4.5, I
D
= 3.1 A
V
GS
= 2.5, I
D
= 2.3 A
V
DS
= 10 V, I
D
= 3.1 A
0.6
1.2
V
DraintoSource OnResistance
60
75
m
80
115
Forward Transconductance
g
FS
6.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V f
V
DS
= 10 V
1 0 MH
180
pF
Output Capacitance
80
Reverse Transfer Capacitance
25
Total Gate Charge
2.6
4.0
nC
Threshold Gate Charge
V
GS
= 4.5 V, V
= 10 V,
I
D
= 3.1 A
0.5
GatetoSource Charge
0.6
GatetoDrain Charge
0.7
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
5.0
10
ns
Rise Time
V
GS
= 4.5 V, V
DS
= 16 V,
I
D
= 3.1 A, R
G
= 2.5
15
30
TurnOff Delay Time
10
20
Fall Time
3.0
6.0
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
ta
V
GS
= 0 V, I
S
= 3.1 A
0.75
1.15
V
Reverse Recovery Time
12.5
ns
Charge Time
V
GS
= 0 V, I
S
= 1.5 A,
dI
S
/dt = 100 A/ s
9.0
Discharge Time
tb
3.5
Reverse Recovery Charge
Q
RR
6.0
nC
2. Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
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| NTHD4508NT1G | 功能描述:MOSFET 20V 4.1A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4N02 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4N02F | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4N02FT1 | 功能描述:MOSFET 20V 3.9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4N02FT1G | 功能描述:MOSFET 20V 3.9A N-Channel w/3.7A Schottky RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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