- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363696 > NTE475 (NTE Electronics, Inc.) Silicon NPN Transistor RF Power Output PDF資料下載
參數(shù)資料
| 型號： | NTE475 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE475 |
NTE475
Silicon NPN Transistor
RF Power Output
Description:
The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier
and driver applications to 300MHz.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage,V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18V
36V
4V
1.5A
11.6W
66.3mW/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, Note 1
V
(BR)CEO
I
C
= 0.25mA, I
E
= 0
V
(BR)EBO
I
E
= 1mA, I
C
= 0
18
–
–
V
Collector–Emitter Breakdown Voltage
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Dynamic Characteristics
Current Gain – Bandwidth Product
f
T
I
C
= 100mA, V
CE
= 13.6V, f = 100MHz
V
CB
= 13.6V, I
E
= 0, f = 100kHz
–
350
–
MHz
Output Capacitance
C
ob
–
12.5
20.0
pF
Functional Tests
Power Input
Common–Emitter Amplifier Power Gain
P
in
G
pe
η
R
L
= 50
, P
out
= 12W, f = 175MHz
–
–
4.0
W
4.77
5.0
–
dB
Collector Efficiency
80
–
–
%
Note 1. Pulsed thru a 25mH inductor.
相關PDF資料 |
PDF描述 |
|---|---|
| NTE476 | Silicon NPN Transistor RF Power Output |
| NTE477 | Silicon NPN Transistor RF Power Output |
| NTE478 | Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz |
| NTE47 | Silicon NPN Transistor High Gain, Low Noise Amp |
| NTE480 | Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTE476 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output |
| NTE477 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 17V 10A 3-Pin |
| NTE478 | 制造商:NTE Electronics 功能描述:T-NPN-SI-RF PO-100W 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 20A 3-Pin |
| NTE48 | 制造商:NTE Electronics 功能描述:T-NPN SI DARLINGTON 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR NPN 50V 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR, NPN, 50V 制造商:NTE Electronics 功能描述:T-NPN-SI DARLINGTON 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR, NPN, 50V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:1GHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:40000; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Darlington NPN 50V 1A 3-Pin TO-92 |
| NTE480 | 制造商:NTE Electronics 功能描述:T-NPN SI-UHF PO 40W |
發(fā)布緊急采購，3分鐘左右您將得到回復。