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參數(shù)資料
| 型號(hào)： | NTE47 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Gain, Low Noise Amp |
| 中文描述： | 硅NPN晶體管高增益，低噪聲放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE47 |
NTE47
Silicon NPN Transistor
High Gain, Low Noise Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
45V
45V
6.5V
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200mA
625mW
12mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
83.3
°
C/W
200
°
C/W
Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 10mA, I
B
= 0, Note 2
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 30V, I
E
= 0
45
–
–
V
Colletor–Base Breakdown Voltage
45
–
–
V
Emitter–Base Breakdown Voltage
6.5
–
–
V
Collector Cutoff Current
–
1.0
50
nA
ON Characteristics
(Note 2)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10
μ
A
V
CE
= 5V, I
C
= 100
μ
A
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 50mA, I
B
= 0.5mA
V
CE
= 5V, I
C
= 1mA
400
580
–
500
850
–
500
1100
–
500
1150
–
Collector–Emitter Saturation Voltage
V
CE(sat)
–
–
0.2
V
–
0.08
0.3
V
Base–Emitter ON Voltage
V
BE(on)
–
0.6
0.7
V
Note 2 Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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