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參數(shù)資料
| 型號： | NTE477 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE477 |
NTE477
Silicon NPN Transistor
RF Power Output
Description:
The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF
band mobile radio applications.
Features:
High power gain: G
pe
≥
8.2dB @ V
CC
= 13.5V; V
O
= 40W; t = 175MHz
Emitter ballasted construction and gold metallization for high reliability, and good performances
Low thermal resistance ceramic package with flange
Ability of withstanding more than 20:1 load VSWR when operated at V
CC
= 15.2V,
P
O
= 40W, f = 175MHz, T
C
= 25
°
C
Applications:
30 to 35 watts output power amplifiers in VHF band mobile radio applications.
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (R
BE
=
∞
), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V
4V
17V
10A
4.5W
75W
+175
°
C
–55
°
to +175
°
C
33.3
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Symbol
V
(BR)EBO
I
E
= 10mA, I
O
= 0
V
(BR)CBO
I
O
= 10mA, I
E
= 0
V
(BR)CEO
I
O
= 0.1A, R
BE
=
∞
Test Conditions
Min
3
35
17
Typ
–
–
–
Max
–
–
–
Unit
V
V
V
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