- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363694 > NTE366 (NTE Electronics, Inc.) Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz PDF資料下載
參數(shù)資料
| 型號： | NTE366 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz |
| 中文描述： | 硅NPN晶體管射頻輸出功率25瓦寶\u003d @ 512MHz |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE366 |
NTE366
Silicon NPN Transistor
RF Power Output
P
O
= 25W @ 512MHz
Description:
The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 25 Watts
Minimum Gain = 6.2dB
Efficiency = 60%
Characterized with Series Equivalent Large–Signal Impedance Parameters
Built–In Matching Network for Broadband Operation
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line
and Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current–Continuous, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
16V
36V
4V
4A
103W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
590mW/
°
C
–65
°
to +150
°
C
1.7
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
I
C
= 20mA, I
B
= 0
I
C
= 20mA, V
BE
= 0
I
E
= 5mA, I
C
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +25
°
C
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE367 | Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz |
| NTE368 | Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz |
| NTE369 | Silicon NPN Transistor TV Vertical Deflection, Switch |
| NTE3032 | Phototransistor Detector NPN-Si, Visible & IR |
| NTE36 | Silicon Complementary Transistors AF Power Amplifier, High Current Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE367 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 36V IC=8A PO=45W 407-512 MHZ RF POWER OUTPUT |
| NTE368 | 制造商:NTE Electronics 功能描述:T-NPN-SI-RF PO-60W 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 16V 11A 3-Pin |
| NTE369 | 制造商:NTE Electronics 功能描述:T-NPN-SI-VERT OUTPUT-SW 制造商:NTE Electronics 功能描述:VERT DFLCT SW TO-66 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 400V 1A 2-Pin(2+Tab) TO-66 |
| NTE36MP | 制造商:NTE Electronics 功能描述:T-NPN-SI-MATCHED PAIR |
| NTE37 | 制造商:NTE Electronics 功能描述:T-PNP SI PWR AMP HI SP SW 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -140V TO-3P 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -140V, TO-3P 制造商:NTE Electronics 功能描述:T-PNP-SI-PWR AMP-HI SP SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -140V, TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-140V; Transition Frequency Typ ft:15MHz; Power Dissipation Pd:100W; DC Collector Current:12A; DC Current Gain hFE:200; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 140V 15A 3-Pin(3+Tab) TO-3P |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。