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參數(shù)資料
| 型號： | NTE3032 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Phototransistor Detector NPN-Si, Visible & IR |
| 中文描述： | 光電探測器npn型硅，可見 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE3032 |
NTE369
Silicon NPN Transistor
TV Vertical Deflection, Switch
Description:
The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters,
regulators, and switching circuits.
Features:
High Voltage: V
CBO
= 800V
Gain Specified to 200mA
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V
800V
6V
1A
300mA
40W
+150
°
C
–65
°
to +150
°
C
3.12
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
CBO
I
EBO
I
C
= 10mA, I
B
= 0
V
CB
= 800V
V
EB
= 6V, I
C
= 0
400
–
–
V
Collector Cutoff Current
–
–
100
Emitter Cutoff Current
–
–
100
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 200mA, V
CE
= 10V
I
C
= 500mA, I
B
= 50mA
30
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
–
–
5
V
Dynamic Characteristics
Current Gain–Bandwidth Product
f
T
I
E
= –100mA, V
CE
= 10V, f = 1MHz
–
7
–
MHz
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