參數(shù)資料
型號(hào)： NTE1854D
廠商： NTE Electronics, Inc.
英文描述： Integrated Circuit Dual Power Operational Amplifie
中文描述： 集成電路雙電源運(yùn)行Amplifie
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 27K
代理商： NTE1854D
NTE322
Silicon NPN Transistor
RF Power Output
Description:
The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citi-
zen–Band and other high–frequency communications equipment operating to 30MHz. Higher break-
down voltages allow a high percentage of up–modulation in AM circuits.
Features:
Output Power: 3.5W (Min) @ V
CC
= 13.6V
Power Gain: 11.5dB (Min)
High Collector Emitter Breakdown Voltage: V
(BR)CES
≥
65V
DC Current Gain: Linear to 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CES
Emitter–Base Voltage, V
EB
Continuous Collector Current, I
C
Total Power Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Junction Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction to Ambient (Note 1), R
thJA
Note 1. R
thJA
is measured with the device soldered into a typical printed circuit board.
65V
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA
1.0W
8.0mW/
°
C
10W
80mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
12.5
°
C/W
125
°
C/W
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