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參數(shù)資料
| 型號： | NTE327 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Power Amp, Switch |
| 中文描述： | 硅NPN晶體管功率放大器，開關 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE327 |
NTE327
Silicon NPN Transistor
Power Amp, Switch
Description:
The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier
and switching circuit applications.
Features:
High Collector–Emitter Sustaining Voltage
High DC Current Gain
Low Collector–Emitter Saturation Voltage
Fast Switching Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
150V
180V
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25A
50A
10A
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.14W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
0.875
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
CEX
I
C
= 50mA, I
B
= 0, Note 1
V
CE
= 150V, V
EB(off)
= 1.5V
V
CE
= 150V, V
EB(off)
= 1.5V,
T
C
= +150
°
C
V
CE
= 75V, I
B
= 0
V
CB
= 180V, I
E
= 0
V
BE
= 6V, I
C
= 0
150
–
–
V
Collector Cutoff Current
–
–
10
mA
–
–
1.0
mA
I
CEO
I
CBO
I
EBO
–
–
50
μ
A
μ
A
μ
A
–
–
50
Emitter Cutoff Current
–
–
100
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|---|---|
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTE328 | 制造商:NTE Electronics 功能描述:T-NPN- SI-PWR AMP- SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 120V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:120; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 120V 50A 3-Pin(2+Tab) TO-3 |
| NTE329 | 制造商:NTE Electronics 功能描述:T-NPN- SI-RF PWR AMP- CB 制造商:NTE Electronics 功能描述:TO-39 NPN RF PWR AMP |
| NTE330 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP GERMANIUM 50V IC=25A TO-36 CASE HIGH POWER SWITCH 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 40V 25A 3-Pin TO-36 |
| NTE3300 | 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 400V 10A 3-Pin(3+Tab) TO-220FP |
| NTE3301 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
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