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參數(shù)資料
| 型號(hào)： | NTB75N03-06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK |
| 中文描述： | 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 60K |
| 代理商： | NTB75N03-06 |
NTP75N0306, NTB75N0306
http://onsemi.com
4
V
GS
= 4 V
V
GS
= 4.5 V
1.6
1.4
1
1.2
0.8
0.6
1
100
1000
120
90
135
75
105
0
0.5
150
0.006
0
90
2.6
60
0.4
0.2
I
D
,
30
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
10
0.0075
0.0070
0.0065
0.0060
50
40
30
0.0055
0.0050
0.0045
0.0040
0.0030
20
60
70
120
Figure 3. OnResistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current vs.
Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
I
D
,
120
50
50
25
0
25
75
125
150
2.5
3
2
1.5
3.5
1
4
0
80
60
40
100
20
120
0.007
0.005
0.004
0.008
0.009
5
15
20
25
10
30
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
0
0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
60
45
30
15
0.0035
80
90 100
10
100
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 3 V
V
GS
= 2.5 V
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
GS
= 10 V
V
GS
= 5 V
T
J
= 25
°
C
V
GS
= 10 V
V
GS
= 0 V
V
GS
= 10 V
I
D
= 37.5 A
T
J
= 125
°
C
T
J
= 100
°
C
V
GS
= 3.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB75N03-06T4 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03-6G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03-6T4G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03L09 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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